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High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control (invited).

Conference ·
OSTI ID:1427304
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Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1427304
Report Number(s):
SAND2018-2511C; 661276
Country of Publication:
United States
Language:
English

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