High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control (invited).

Conference · Thu Mar 01 00:00:00 EST 2018

OSTI ID:1427304

Armstrong, Andrew; Feezel, Daniel; Allerman, Andrew A.; Pickrell, Gregory; Monavarian, Morteza; Stricklin, Isaac; Crawford, Mary H.; Celio, Kimberlee Chiyoko; Leonard, Francois Leonard; Talin, Albert Alec

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1427304
• Report Number(s): SAND2018-2511C; 661276
• Resource Relation: Conference: Proposed for presentation at the 2018 ARPA-E Energy Summit held March 13-15, 2018 in National Harbor, MD, United States of America .
• Country of Publication: United States
• Language: English