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Investigation of Interfacial Impurities in m-Plane GaN Regrown p-n Junctions for High-Power Vertical Electronic Devices.

Conference ·
DOI:https://doi.org/10.1117/12.2322005· OSTI ID:1806785
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  1. UNM
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Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1806785
Report Number(s):
SAND2018-9196C; 667251
Country of Publication:
United States
Language:
English

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