Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes.

Conference ·

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1531054
Report Number(s):
SAND2015-6616C; 665055
Country of Publication:
United States
Language:
English

Similar Records

Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes
Journal Article · Thu Oct 29 00:00:00 EDT 2015 · IEEE Transactions on Nuclear Science · OSTI ID:1239987

Investigation of deep levels in high-breakdown-voltage low-threading-dislocation-density vertical GaN P-i-N diodes.
Conference · Sat Aug 01 00:00:00 EDT 2015 · OSTI ID:1576130

Impact of Interfacial Impurities on the Electrical Performance of Regrown Nonpolar (1010) GaN Vertical p-n Diodes.
Conference · Mon Jul 01 00:00:00 EDT 2019 · OSTI ID:1641136

Related Subjects