Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes.

Conference · Sat Aug 01 00:00:00 EDT 2015

DOI:https://doi.org/10.1109/TNS.2015.2480071· OSTI ID:1531054

King, Michael Patrick; Armstrong, Andrew; Dickerson, Jeramy Ray; Vizkelethy, Gyorgy; Fleming, Robert M.; Campbell, Jonathan; Wampler, William R.; Kiziyalli, I. C.; Bour, D. P.; Aktas, O.; Nie, H.; Disney, D.; Wierer, J. Jr.; Allerman, Andrew A.; Moseley, Michael William; Kaplar, Robert

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1531054
• Report Number(s): SAND2015-6616C; 665055
• Resource Relation: Journal Volume: 62; Journal Issue: 6; Conference: Proposed for presentation at the IEEE NSREC.
• Country of Publication: United States
• Language: English