Visible and Solar-Blind Photodetectors Using AlGaN High Electron Mobility Transistors with Nanodot-Based Floating Gate.
Conference
·
OSTI ID:1641076
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1641076
- Report Number(s):
- SAND2019-7691C; 677129
- Country of Publication:
- United States
- Language:
- English
Similar Records
Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate
Surface Analysis of AlGaN Channel High Electron Mobility Transistors.
Journal Article
·
Wed May 22 00:00:00 EDT 2019
· Photonics Research
·
OSTI ID:1514767
Surface Analysis of AlGaN Channel High Electron Mobility Transistors.
Conference
·
Sun Oct 01 00:00:00 EDT 2017
·
OSTI ID:1478167