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Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate

Journal Article · · Photonics Research
DOI:https://doi.org/10.1364/PRJ.7.000B24· OSTI ID:1514767

Not Available

Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
NONE; NA0003525
OSTI ID:
1514767
Alternate ID(s):
OSTI ID: 1526222
Journal Information:
Photonics Research, Journal Name: Photonics Research Journal Issue: 6 Vol. 7; ISSN 2327-9125
Publisher:
Optical Society of America (OSA)Copyright Statement
Country of Publication:
United States
Language:
English

References (18)

High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate journal January 2009
Room-Temperature Phototransistor with Negative Photoresponsivity of 10 8 A W −1 Using Fullerene-Sensitized Aligned Carbon Nanotubes journal September 2018
Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates journal March 2013
Detection of single photons using a field-effect transistor gated by a layer of quantum dots journal June 2000
Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures journal September 2006
Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency journal December 2006
Selective area deposited n -Al 0.5 Ga 0.5 N channel field effect transistors with high solar-blind ultraviolet photo-responsivity journal April 2017
Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors journal March 2018
High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector journal November 2017
Operational Analysis of a Quantum Dot Optically Gated Field-Effect Transistor as a Single-Photon Detector journal January 2007
High-Gain AlGaN Solar-Blind Avalanche Photodiodes journal March 2014
Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection
  • Rowe, M. A.; Gansen, E. J.; Greene, M. B.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 3 https://doi.org/10.1116/1.2837839
journal January 2008
Front Matter: Volume 7320 conference May 2009
High Temperature Operation of Al 0.45 Ga 0.55 N/Al 0.30 Ga 0.70 N High Electron Mobility Transistors journal January 2017
Planar Ohmic Contacts to Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N High Electron Mobility Transistors journal January 2017
Al 0.85 Ga 0.15 N/Al 0.70 Ga 0.30 N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature journal January 2017
Electrochemical Deposition of Bi 2 (Te,Se) 3 Nanowire Arrays on Si journal January 2012
Planarized arrays of aligned, untangled multiwall carbon nanotubes with Ohmic back contacts journal November 2014

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