Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate

Armstrong, Andrew M.; Klein, Brianna A.; Allerman, Andrew A.; Baca, Albert G.; Crawford, Mary H.; Podkaminer, Jacob; Perez, Carlos R.; Siegal, Michael P.; Douglas, Erica A.; Abate, Vincent M.; Leonard, Francois

doi:10.1364/PRJ.7.000B24

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate

Journal Article · Wed May 22 00:00:00 EDT 2019 · Photonics Research

DOI:https://doi.org/10.1364/PRJ.7.000B24· OSTI ID:1514767

; Klein, Brianna A.; Allerman, Andrew A.; Baca, Albert G.; Crawford, Mary H.; Podkaminer, Jacob; Perez, Carlos R.; Siegal, Michael P.; Douglas, Erica A.; Abate, Vincent M.;

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Research Organization:: Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1514767

Alternate ID(s):: OSTI ID: 1526222

Report Number(s):: SAND--2019-5989J

Journal Information:: Photonics Research, Journal Name: Photonics Research Journal Issue: 6 Vol. 7; ISSN 2327-9125

Publisher:: Optical Society of America (OSA)Copyright Statement

Country of Publication:: United States

Language:: English

References (18)

High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate Iwaya, Motoaki; Miura, Shuichi; Fujii, Takahiro physica status solidi (c), Vol. 6, Issue S2 https://doi.org/10.1002/pssc.200880815	journal	January 2009
Room-Temperature Phototransistor with Negative Photoresponsivity of 10 ⁸ A W ⁻¹ Using Fullerene-Sensitized Aligned Carbon Nanotubes Bergemann, Kevin; Léonard, François Small, Vol. 14, Issue 42 https://doi.org/10.1002/smll.201802806	journal	September 2018
Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates Suvarna, Puneet; Tungare, Mihir; Leathersich, Jeffrey M. Journal of Electronic Materials, Vol. 42, Issue 5 https://doi.org/10.1007/s11664-013-2537-8	journal	March 2013
Detection of single photons using a field-effect transistor gated by a layer of quantum dots Shields, A. J.; O’Sullivan, M. P.; Farrer, I. Applied Physics Letters, Vol. 76, Issue 25 https://doi.org/10.1063/1.126745	journal	June 2000
Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures Wang, Y. D.; Zang, K. Y.; Chua, S. J. Journal of Applied Physics, Vol. 100, Issue 5 https://doi.org/10.1063/1.2337168	journal	September 2006
Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency Rowe, M. A.; Gansen, E. J.; Greene, M. Applied Physics Letters, Vol. 89, Issue 25 https://doi.org/10.1063/1.2403907	journal	December 2006
Selective area deposited n -Al _0.5 Ga _0.5 N channel field effect transistors with high solar-blind ultraviolet photo-responsivity Muhtadi, S.; Hwang, S.; Coleman, A. Applied Physics Letters, Vol. 110, Issue 17 https://doi.org/10.1063/1.4982599	journal	April 2017
Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors Armstrong, Andrew M.; Klein, Brianna; Allerman, Andrew A. Journal of Applied Physics, Vol. 123, Issue 11 https://doi.org/10.1063/1.4997605	journal	March 2018
High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector Yoshikawa, Akira; Ushida, Saki; Nagase, Kazuhiro Applied Physics Letters, Vol. 111, Issue 19 https://doi.org/10.1063/1.5001979	journal	November 2017
Operational Analysis of a Quantum Dot Optically Gated Field-Effect Transistor as a Single-Photon Detector Gansen, Eric J.; Rowe, Mary A.; Greene, Marion B. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 13, Issue 4 https://doi.org/10.1109/JSTQE.2007.902843	journal	January 2007
High-Gain AlGaN Solar-Blind Avalanche Photodiodes Shao, Zhen Guang; Chen, Dun Jun; Lu, Hai IEEE Electron Device Letters, Vol. 35, Issue 3 https://doi.org/10.1109/LED.2013.2296658	journal	March 2014
Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection Rowe, M. A.; Gansen, E. J.; Greene, M. B. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 3 https://doi.org/10.1116/1.2837839	journal	January 2008
Front Matter: Volume 7320 Spie, Proceedings of SPIE Defense, Security, and Sensing, SPIE Proceedings https://doi.org/10.1117/12.833492	conference	May 2009
High Temperature Operation of Al _0.45 Ga _0.55 N/Al _0.30 Ga _0.70 N High Electron Mobility Transistors Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A. ECS Journal of Solid State Science and Technology, Vol. 6, Issue 11 https://doi.org/10.1149/2.0041711jss	journal	January 2017
Planar Ohmic Contacts to Al _0.45 Ga _0.55 N/Al _0.3 Ga _0.7 N High Electron Mobility Transistors Klein, B. A.; Baca, A. G.; Armstrong, A. M. ECS Journal of Solid State Science and Technology, Vol. 6, Issue 11 https://doi.org/10.1149/2.0181711jss	journal	January 2017
Al _0.85 Ga _0.15 N/Al _0.70 Ga _0.30 N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A. ECS Journal of Solid State Science and Technology, Vol. 6, Issue 12 https://doi.org/10.1149/2.0231712jss	journal	January 2017
Electrochemical Deposition of Bi ₂ (Te,Se) ₃ Nanowire Arrays on Si Limmer, Steven J.; Yelton, W. Graham; Siegal, Michael P. Journal of The Electrochemical Society, Vol. 159, Issue 4 https://doi.org/10.1149/2.084204jes	journal	January 2012
Planarized arrays of aligned, untangled multiwall carbon nanotubes with Ohmic back contacts Rochford, C.; Limmer, S. J.; Howell, S. W. Journal of Materials Research, Vol. 30, Issue 2 https://doi.org/10.1557/jmr.2014.359	journal	November 2014

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