Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors
Journal Article
·
· Journal of Applied Physics
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Not Available
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1427323
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 123; ISSN 0021-8979
- Publisher:
- American Institute of PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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