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Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4997605· OSTI ID:1427323

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Sponsoring Organization:
USDOE
OSTI ID:
1427323
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 123; ISSN 0021-8979
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English

References (30)

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