Surface Analysis of AlGaN Channel High Electron Mobility Transistors.
Conference
·
OSTI ID:1478167
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1478167
- Report Number(s):
- SAND2017-10939C; 657745
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth and Electrical Properties of Al-Rich AlGaN/AlGaN Heterostructures for High-Electron-Mobility Transistors.
AlGaN High Electron Mobility Transistor for High Temperature Logic.
AlGaN High Electron Mobility Transistor for High Temperature Logic.
Conference
·
Tue Aug 01 00:00:00 EDT 2017
·
OSTI ID:1464999
AlGaN High Electron Mobility Transistor for High Temperature Logic.
Conference
·
Wed Jun 01 00:00:00 EDT 2022
·
OSTI ID:2003785
AlGaN High Electron Mobility Transistor for High Temperature Logic.
Conference
·
Fri Jul 01 00:00:00 EDT 2022
·
OSTI ID:2003976