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Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices

Patent ·
OSTI ID:1600168
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Techniques for forming an ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO2, ZnO, SnO, ZnSnO, Ga2O3, and combinations thereof. A photovoltaic device is also provided.

Research Organization:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0006334
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Number(s):
10,446,704
Application Number:
14/984,512
OSTI ID:
1600168
Country of Publication:
United States
Language:
English

References (4)

Preparation of the Ag–Zn–Sn–S quaternary photoelectrodes using chemical bath deposition for photoelectrochemical applications journal May 2014
Boosting Cu2ZnSnS4 solar cells efficiency by a thin Ag intermediate layer between absorber and back contact journal January 2014
Enhancing the Cu 2 ZnSnS 4 solar cell efficiency by back contact modification: Inserting a thin TiB 2 intermediate layer at Cu 2 ZnSnS 4 /Mo interface journal February 2014
Inhibiting MoS2 formation by introducing a ZnO intermediate layer for Cu2ZnSnS4 solar cells journal September 2014

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Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
42 ENGINEERING