Fluorinated tin oxide back contact for AZTSSe photovoltaic devices
Patent
·
OSTI ID:1348367
A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.
- Research Organization:
- International Business Machines Corporation, Armonk, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0006334
- Assignee:
- INTERNATIONAL BUSINESS MACHINES CORPORATION
- Patent Number(s):
- 9,608,141
- Application Number:
- 14/968,252
- OSTI ID:
- 1348367
- Country of Publication:
- United States
- Language:
- English
Solution-phase Synthesis of Stannite-type Ag2ZnSnS4 Nanoparticles for Application to Photoelectrode Materials
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journal | September 2012 |
A Study of Increased Resistivity of FTO Back Contact for CZTS Based Absorber Material Grown by Electrodeposition-Annealing Route
|
journal | January 2011 |
| CGS-Thin Films Solar Cells on Transparent Back Contact | conference | May 2006 |
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