Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
Patent
·
OSTI ID:1432813
A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.
- Research Organization:
- International Business Machines Corporation, Armonk, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0006334
- Assignee:
- International Business Machines Corporation, Armonk, NY
- Patent Number(s):
- 9,935,214
- Application Number:
- 14/880,808
- OSTI ID:
- 1432813
- Country of Publication:
- United States
- Language:
- English
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