Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Thin film CZTSSe photovoltaic device

Patent ·
OSTI ID:1735167
; ;
A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.
Research Organization:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0006334
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Number(s):
10,749,050
Application Number:
15/401,381
OSTI ID:
1735167
Country of Publication:
United States
Language:
English

References (7)

Growth of CZTS-Based Monograins and Their Application to Membrane Solar Cells book December 2014
Package-Free Flexible Organic Solar Cells with Graphene top Electrodes journal April 2013
GaSe Formation at the Cu(In,Ga)Se2/Mo Interface-A Novel Approach for Flexible Solar Cells by Easy Mechanical Lift-Off journal May 2014
Strain-Engineering of Band Gaps in Piezoelectric Boron Nitride Nanoribbons journal February 2012
Electrospun Cu 2 ZnSnS 4 microfibers with strong (112) preferred orientation: fabrication and characterization journal January 2015
Layer-Resolved Graphene Transfer via Engineered Strain Layers journal October 2013
Improving Silicon Crystallinity by Grain Reorientation Annealing journal January 2009

Similar Records

Related Subjects

14 SOLAR ENERGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY