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Title: Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices

Patent ·
OSTI ID:1600168
; ; ;

Techniques for forming an ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO2, ZnO, SnO, ZnSnO, Ga2O3, and combinations thereof. A photovoltaic device is also provided.

Research Organization:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0006334
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Number(s):
10,446,704
Application Number:
14/984,512
OSTI ID:
1600168
Resource Relation:
Patent File Date: 12/30/2015
Country of Publication:
United States
Language:
English

References (18)

Boosting Cu2ZnSnS4 solar cells efficiency by a thin Ag intermediate layer between absorber and back contact journal January 2014
Fluorinated tin oxide back contact for AZTSSe photovoltaic devices patent March 2017
Enhancing the Cu 2 ZnSnS 4 solar cell efficiency by back contact modification: Inserting a thin TiB 2 intermediate layer at Cu 2 ZnSnS 4 /Mo interface journal February 2014
Heat treatment process and photovoltaic device based on said process patent February 2014
Method of Forming Semiconductor Film and Photovoltaic Device Including the Film patent-application April 2011
Compound Solar Cell and Process for Producing the Same patent-application December 2005
Chalcogenide-Based Photovoltaic Devices and Methods of Manufacturing the Same patent-application January 2011
Inhibiting MoS2 formation by introducing a ZnO intermediate layer for Cu2ZnSnS4 solar cells journal September 2014
Preparation of the Ag–Zn–Sn–S quaternary photoelectrodes using chemical bath deposition for photoelectrochemical applications journal May 2014
Current enhanced photovoltaic device patent April 1983
High Work Function Low Resistivity Back Contact for Thin Film Solar Cells patent-application March 2013
Photovoltaic Device and Process for Producing Same patent-application May 2010
Compound semiconductor solar cell patent-application May 2015
Ohmic Contact of Thin Film Solar Cell patent-application January 2014
Photoelectric Conversion Device, and Solar Cell patent-application March 2016
Fabrication of CuZnSn(S,Se) Thin Film Solar Cell with Valve Controlled S and Se patent-application April 2012
Back Contacts For Thin Film Solar Cells patent-application April 2013
Thin-Film Solar Cell and Manufacturing Method Thereof patent-application May 2012

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