Active Gate Current Control for Non-Insulating-Gate WBG Devices

Conference · Tue Oct 15 04:00:00 EDT 2019 · IEEE Energy Conversion Congress and Exposition (ECCE)

DOI:https://doi.org/10.1109/ECCE.2017.8096394· OSTI ID:1578096

Wang, Jin ^[1]

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1. The Ohio State Univ., Columbus, OH (United States); THE OHIO STATE UNIVERSITY

This paper proposes an Active Gate Current Control (AGCC) strategy for non-insulating gate WBG devices, for example, gallium nitride gate-injection-transistor (GaN-GIT) and silicon carbide super junction transistor (SiC-SJT). It provides a tool for power converter designers to further improve the converter efficiency and to extend the life time of those higher cost power transistors. By continuously adjusting the device gate current, the proposed AGCC strategy can control the device switching speed, switching loss, conduction loss and gate loss together to achieve operation goals, including lower semiconductor loss, lower thermal stress, lower EMI spectrum, or smaller voltage overshoot across the full range

• Research Organization: THE OHIO STATE UNIVERSITY
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science and Technology (ST)
• DOE Contract Number: EE0007255
• OSTI ID: 1578096
• Conference Information: Journal Name: IEEE Energy Conversion Congress and Exposition (ECCE) Journal Volume: 2017
• Country of Publication: United States
• Language: English

Related Subjects

GaN GIT
SiC SJT
dv/dt
intelligent gate drive