SiC and GaN Devices With Cryogenic Cooling
- Univ. of Tennessee, Knoxville, TN (United States)
This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Electricity Delivery and Energy Reliability (OE)
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1817397
- Journal Information:
- IEEE Open Journal of Power Electronics, Journal Name: IEEE Open Journal of Power Electronics Journal Issue: 1 Vol. 2; ISSN 2644-1314
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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