(Invited) Ruggedness of SiC and GaN Power Transistors in Switching Based Tests
- Virginia Polytechnic Institute and State University (Virginia Tech), Blacksburg, VA (United States); Virginia Polytechnic Institute and State University
- Virginia Polytechnic Institute and State University (Virginia Tech), Blacksburg, VA (United States)
Currently, a spectrum of reliability tests are being performed by both device manufacturers and end users. Many of these qualification tests are operated within the device safe-operating-area (SOA), however, the devices often undergo dynamic events in many converter applications that can exceed the SOA boundaries. This paper presents our recent work on quantifying the out-of-SOA robustness of GaN power high-electron-mobility transistors (HEMTs) and SiC power MOSFETs by switching based tests. The unclamped inductive switching stresses are applied to p-gate GaN HEMTs to evaluate their surge-energy and overvoltage robustness. The continuous, hard-switching, turn-off stresses are applied to SiC MOSFETs to evaluate their overvoltage switching robustness. As a result, both experiments demonstrate the robustness of SiC and GaN devices under out-of-SOA switching events, and the physics of degradation and failure are understood.
- Research Organization:
- Virginia Polytechnic Institute and State University (Virginia Tech), Blacksburg, VA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Advanced Materials & Manufacturing Technologies Office (AMMTO)
- Grant/Contract Number:
- EE0006521
- OSTI ID:
- 2441271
- Journal Information:
- ECS Transactions, Journal Name: ECS Transactions Journal Issue: 6 Vol. 98; ISSN 1938-5862
- Publisher:
- Electrochemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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