Graphite-Embedded High-Performance Insulated Metal Substrate for Wide-Bandgap Power Modules

Journal Article · Tue Jun 16 04:00:00 EDT 2020 · IEEE Transactions on Power Electronics

DOI:https://doi.org/10.1109/tpel.2020.3001528· OSTI ID:1659617

Gurpinar, Emre ^[1]; Chowdhury, Shajjad ^[1]; Ozpineci, Burak ^[1]; Fan, Wei ^[2]

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1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Power Electronics and Electric Machinery Research Group
2. Momentive Performance Materials, Inc., Strongsville, OH (United States)

Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. Here, we present a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on -state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Transportation Office. Vehicle Technologies Office
• Grant/Contract Number: AC05-00OR22725
• OSTI ID: 1659617
• Journal Information: IEEE Transactions on Power Electronics, Journal Name: IEEE Transactions on Power Electronics Journal Issue: 1 Vol. 36; ISSN 0885-8993
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
MOSFET
direct-bonded copper (DBC)
graphite
insulated metal substrate (IMS)
integration
packaging
power module
silicon-carbide (SiC)
wide-bandgap (WBG) power devices