SiC MOSFET Based Power Module Design and Analysis for EV Traction Systems

Gurpinar, Emre; Wiles, Randy; Ozpineci, Burak; Raminosoa, Tsarafidy; Zhou, Feng; Liu, Yanghae; Dede, Ercan

doi:10.1109/ECCE.2018.8557609

SiC MOSFET Based Power Module Design and Analysis for EV Traction Systems

Conference · Sat Sep 01 00:00:00 EDT 2018

DOI:https://doi.org/10.1109/ECCE.2018.8557609· OSTI ID:1474598

^[1]; ^[1]; ^[1]; ^[1]; Zhou, Feng ^[2]; Liu, Yanghae ^[2]; Dede, Ercan ^[2]

ORNL
Toyota Research Institute, North America

Wide bandgap (WBG) power semiconductor devices, specifically silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained attention from electric vehicle (EV) system developers due to well-known superior properties in comparison to industry standard silicon (Si) based MOSFETs and insulated-gate bipolar transistors (IGBTs). In this work, a power module design based on SiC MOSFETs in a segmented two-level, three-phase inverter topology with 125 kW peak output power and 30 kHz switching frequency is presented. Three different SiC MOSFET die options are analyzed according to experimentally obtained operating conditions of a commercial EV traction system. Substrate design of the power module for multi-die layout, heat sink design, and integration of a segmented phase leg module are presented. Finite-element electrical and thermal analysis of the proposed system are presented and discussed.

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC05-00OR22725

OSTI ID:: 1474598

Country of Publication:: United States

Language:: English

References (9)

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