Loss Analysis and Mapping of a SiC MOSFET Based Segmented Two-Level Three-Phase Inverter for EV Traction Systems
- ORNL
Emerging wide-bandgap based power semiconductor devices are gaining popularity in power electronic systems for automotive applications with the aim of increased power density, reduced weight and increased efficiency. In this work, loss analysis and mapping of a segmented two-level inverter based on SiC MOSFETs are presented in order to identify the challenges in design of power electronics and electric machines for EV applications. The paper starts with description of the EV traction system that is chosen as the study case, followed by segmented inverter topology, power device selection and sizing. The theoretical switching, conduction and dead-time conduction loss analysis for the SiC MOSFETs in the segmented two-level inverter topology are presented under any given operating condition. The analysis is followed by loss mapping of the motor, inverter and overall EV traction system. The loss maps of the inverter and the motor show that each component has different thermal loading trends under given torque-speed characteristics. Therefore, various operating conditions have to be considered for the design of traction system components to ensure reliability and high performance, which are critical requirements for EV systems.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1474641
- Country of Publication:
- United States
- Language:
- English
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