A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters
- Wisconsin Electric Machines and Power Electronics Consortium, University of Wisconsin-Madison,Madison,USA
Power loss estimation of power electronic devices is important to the efficiency optimization of motor drives used in many applications. However, most existing simplified power loss models of silicon carbide (SiC) MOSFETs are not sufficiently accurate due to their neglect of parasitic parameters in the current commutation loop. In addition, the loss model of the voltage source inverter (VSI) cannot be directly applied to the current source inverter (CSI) because of differences between their commutation loops. First, the commutation processes for VSIs and CSIs are compared. The voltage and current trajectories of SiC MOSFETs in the switching transition of a CSI-based motor drive system are analyzed in detail. Based on these results, the conduction and switching losses of SiC MOSFETs in CSIs are modeled considering the current commutation details. In addition, the proposed analytical model includes parasitic inductances and capacitances in the current commutation loop. Experimental results have verified that the proposed power loss model delivers higher accuracy loss predictions than the conventional loss model.
- Research Organization:
- University of Wisconsin System
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Office of Sustainable Transportation. Vehicle Technologies Office (VTO)
- DOE Contract Number:
- EE0008704
- OSTI ID:
- 2535656
- Journal Information:
- 2022 IEEE Energy Conversion Congress and Exposition (ECCE), Journal Name: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)
- Country of Publication:
- United States
- Language:
- English
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