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Title: Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber

Patent ·
OSTI ID:1568464
; ; ; ;

Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

Research Organization:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0006334
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Number(s):
10,319,871
Application Number:
16/028,249
OSTI ID:
1568464
Resource Relation:
Patent File Date: 07/05/2018
Country of Publication:
United States
Language:
English

References (7)

Process for Preparation of Elemental Chalcogen Solutions and Method of Employing Said Solutions in Preparation of Kesterite Films patent-application February 2013
Compound semiconductor solar cell patent-application May 2015
Heat treatment process and photovoltaic device based on said process patent February 2014
Fabrication of CuZnSn(S,Se) Thin Film Solar Cell with Valve Controlled S and Se patent-application April 2012
Forming chalcogenide semiconductor absorbers patent October 2013
Fluorinated tin oxide back contact for AZTSSe photovoltaic devices patent March 2017
Semiconductor nanoparticles and method for producing same patent May 2015

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