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Title: Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber

Abstract

Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1464125
Patent Number(s):
10,032,949
Application Number:
14/936,131
Assignee:
International Business Machines Corporation (Armonk, NY)
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Nov 09
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 15 GEOTHERMAL ENERGY

Citation Formats

Gershon, Talia S., Guha, Supratik, Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber. United States: N. p., 2018. Web.
Gershon, Talia S., Guha, Supratik, Gunawan, Oki, Haight, Richard A., & Lee, Yun Seog. Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber. United States.
Gershon, Talia S., Guha, Supratik, Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Tue . "Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber". United States. https://www.osti.gov/servlets/purl/1464125.
@article{osti_1464125,
title = {Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber},
author = {Gershon, Talia S. and Guha, Supratik and Gunawan, Oki and Haight, Richard A. and Lee, Yun Seog},
abstractNote = {Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.},
doi = {},
url = {https://www.osti.gov/biblio/1464125}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {7}
}

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Works referenced in this record:

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