skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Lift-off patterning processing employing energetically-stimulated local removal of solid-condensed-gas layers

Abstract

The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions, exposing the structure at the selected regions. A material layer is then deposited on top of the solid condensate layer and the exposed structure at the selected regions. Then the solid condensate layer and regions of the material layer that were deposited on the solid condensate layer are removed, leaving a patterned material layer on the structure.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Harvard College, Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531586
Patent Number(s):
7,524,431
Application Number:
11/008,438
Assignee:
President and Fellows of Harvard College (Cambridge, MA)
DOE Contract Number:  
FG02-01ER45922
Resource Type:
Patent
Resource Relation:
Patent File Date: 2004-12-09
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE

Citation Formats

Branton, Daniel, Golovchenko, Jene A., King, Gavin M., MoberlyChan, Warren J., and Schrmann, Gregor M. Lift-off patterning processing employing energetically-stimulated local removal of solid-condensed-gas layers. United States: N. p., 2009. Web.
Branton, Daniel, Golovchenko, Jene A., King, Gavin M., MoberlyChan, Warren J., & Schrmann, Gregor M. Lift-off patterning processing employing energetically-stimulated local removal of solid-condensed-gas layers. United States.
Branton, Daniel, Golovchenko, Jene A., King, Gavin M., MoberlyChan, Warren J., and Schrmann, Gregor M. Tue . "Lift-off patterning processing employing energetically-stimulated local removal of solid-condensed-gas layers". United States. https://www.osti.gov/servlets/purl/1531586.
@article{osti_1531586,
title = {Lift-off patterning processing employing energetically-stimulated local removal of solid-condensed-gas layers},
author = {Branton, Daniel and Golovchenko, Jene A. and King, Gavin M. and MoberlyChan, Warren J. and Schrmann, Gregor M.},
abstractNote = {The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions, exposing the structure at the selected regions. A material layer is then deposited on top of the solid condensate layer and the exposed structure at the selected regions. Then the solid condensate layer and regions of the material layer that were deposited on the solid condensate layer are removed, leaving a patterned material layer on the structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {4}
}

Patent:

Save / Share:

Works referenced in this record:

    Works referencing / citing this record:

    Nanotube processing employing solid-condensed-gas-layers
    patent, September 2012


    Method of lift-off patterning thin films in situ employing phase change resists
    patent, September 2014


    Method for forming microscopic 3D structures
    patent, December 2013