Lift-off patterning processing employing energetically-stimulated local removal of solid-condensed-gas layers
Patent
·
OSTI ID:1531586
The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions, exposing the structure at the selected regions. A material layer is then deposited on top of the solid condensate layer and the exposed structure at the selected regions. Then the solid condensate layer and regions of the material layer that were deposited on the solid condensate layer are removed, leaving a patterned material layer on the structure.
- Research Organization:
- Harvard College, Cambridge, MA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-01ER45922
- Assignee:
- President and Fellows of Harvard College (Cambridge, MA)
- Patent Number(s):
- 7,524,431
- Application Number:
- 11/008,438
- OSTI ID:
- 1531586
- Country of Publication:
- United States
- Language:
- English
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