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U.S. Department of Energy
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High Voltage Re-Grown GaN P-N Diodes Enabled by Defect and Doping Control (invited).

Conference ·
OSTI ID:1511118
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1511118
Report Number(s):
SAND2017-12372PE; 658713
Country of Publication:
United States
Language:
English

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