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Title: High Voltage Re-Grown GaN P-N Diodes Enabled by Defect and Doping Control (invited).

Conference ·
OSTI ID:1511118

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1511118
Report Number(s):
SAND2017-12372PE; 658713
Resource Relation:
Conference: Proposed for presentation at the ARPA-E PNDIODES Program Kickoff held November 7-8, 2017 in New York, NY.
Country of Publication:
United States
Language:
English