Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate

Journal Article · Fri Mar 01 00:00:00 EST 2019 · Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics

DOI:https://doi.org/10.1116/1.5066327· OSTI ID:1498762

Douglas, Erica A. ^[1]; Klein, Brianna ^[1]; Allerman, Andrew A. ^[1]; Baca, Albert G. ^[1]; Fortune, Torben ^[1]; Armstrong, Andrew M. ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, this work exhibits the ability to shift the threshold voltage of an Al_0.45Ga_0.55N/Al_0.3Ga_0.7N high electron mobility transistor through the implementation of a 100 nm thick p-Al_0.3Ga_0.7N gate. A maximum threshold voltage of +0.3 V was achieved with a 3 μm gate length. In addition to achieving enhancement-mode operation, this work also shows the capability to obtain high saturated drain current (>50 mA/mm), no gate hysteresis, high I_ON,MAX/I_OFF,MIN ratio of >10⁹, and exceptionally low gate leakage current of 10^-6 mA/mm even under high forward bias of V_gs = 8 V.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1498762
• Report Number(s): SAND--2018-10231J; 668003
• Journal Information: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics, Journal Name: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics Journal Issue: 2 Vol. 37; ISSN 2166-2746
• Publisher: American Vacuum Society/AIP
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE