Quantum dots with split enhancement gate tunnel barrier control

Rochette, Sophie; Rudolph, M.; Roy, A. -M.; Curry, M. J.; Eyck, G. A.  Ten; Manginell, R. P.; Wendt, J. R.; Pluym, T.; Carr, S. M.; Ward, D. R.; Lilly, M. P.; Carroll, M. S.; Pioro-Ladrière, M.

doi:10.1063/1.5091111

Quantum dots with split enhancement gate tunnel barrier control

Journal Article · Mon Feb 25 23:00:00 EST 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5091111· OSTI ID:1498477

Rochette, Sophie ^[1]; Rudolph, M. ^[2]; Roy, A. -M. ^[1]; ^[3]; Eyck, G. A. Ten ^[2]; ^[2]; Wendt, J. R. ^[2]; Pluym, T. ^[2]; Carr, S. M. ^[2]; Ward, D. R. ^[2]; Lilly, M. P. ^[2]; Carroll, M. S. ^[2]; Pioro-Ladrière, M. ^[4]

Univ. de Sherbrooke (Canada)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of New Mexico, Albuquerque, NM (United States)
Univ. de Sherbrooke (Canada); Canadian Inst. for Advanced Research, Toronto, ON (Canada)

We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1498477

Alternate ID(s):: OSTI ID: 1498765

Report Number(s):: SAND--2019-0013J; 671222

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 114; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (55)

Physics and characterization of transient effects in SOI transistors Lacaita, A. L.; Perron, L. M. Microelectronic Engineering, Vol. 48, Issue 1-4 https://doi.org/10.1016/s0167-9317(99)00397-4	journal	September 1999
Images of Operators in Rearrangement Invariant Spaces and Interpolation Astashkin, S. V. Function Spaces https://doi.org/10.1142/9789812704450_0005	conference	April 2003
Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot Thalakulam, Madhu; Simmons, C. B.; Van Bael, B. J. arXiv https://doi.org/10.48550/arxiv.1010.0972	text	January 2010
Spin-orbit coupling and operation of multi-valley spin qubits Veldhorst, M.; Ruskov, R.; Yang, C. H. arXiv https://doi.org/10.48550/arxiv.1505.01213	text	January 2015
Introduction to Mesoscopic Electron Transport Kouwenhoven, Leo P.; Schön, Gerd; Sohn, Lydia L. Mesoscopic Electron Transport https://doi.org/10.1007/978-94-015-8839-3_1	book	January 1997
Electron counting in quantum dots Gustavsson, S.; Leturcq, R.; Studer, M. Surface Science Reports, Vol. 64, Issue 6 https://doi.org/10.1016/j.surfrep.2009.02.001	journal	June 2009
Gate-Defined Quantum Dots in Intrinsic Silicon Angus, Susan J.; Ferguson, Andrew J.; Dzurak, Andrew S. Nano Letters, Vol. 7, Issue 7 https://doi.org/10.1021/nl070949k	journal	July 2007
An addressable quantum dot qubit with fault-tolerant control-fidelity Veldhorst, M.; Hwang, J. C. C.; Yang, C. H. Nature Nanotechnology, Vol. 9, Issue 12 https://doi.org/10.1038/nnano.2014.216	journal	October 2014
Coherent coupling between a quantum dot and a donor in silicon Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-01113-2	journal	October 2017
A silicon metal-oxide-semiconductor electron spin-orbit qubit Jock, Ryan M.; Jacobson, N. Tobias; Harvey-Collard, Patrick Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-04200-0	journal	May 2018
A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% Yoneda, Jun; Takeda, Kenta; Otsuka, Tomohiro Nature Nanotechnology, Vol. 13, Issue 2 https://doi.org/10.1038/s41565-017-0014-x	journal	December 2017
Excited-state spectroscopy on a nearly closed quantum dot via charge detection Elzerman, J. M.; Hanson, R.; Willems van Beveren, L. H. Applied Physics Letters, Vol. 84, Issue 23 https://doi.org/10.1063/1.1757023	journal	June 2004
Micromagnets for coherent control of spin-charge qubit in lateral quantum dots Pioro-Ladrière, M.; Tokura, Y.; Obata, T. Applied Physics Letters, Vol. 90, Issue 2 https://doi.org/10.1063/1.2430906	journal	January 2007
Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures Grabert, H.; Devoret, M. H.; Kastner, Marc Physics Today, Vol. 46, Issue 4 https://doi.org/10.1063/1.2808874	journal	April 1993
Fast tunnel rates in Si/SiGe one-electron single and double quantum dots Thalakulam, Madhu; Simmons, C. B.; Rosemeyer, B. M. Applied Physics Letters, Vol. 96, Issue 18 https://doi.org/10.1063/1.3425892	journal	May 2010
Measurement of valley splitting in high-symmetry Si/SiGe quantum dots Borselli, M. G.; Ross, R. S.; Kiselev, A. A. Applied Physics Letters, Vol. 98, Issue 12 https://doi.org/10.1063/1.3569717	journal	March 2011
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots Borselli, M. G.; Eng, K.; Croke, E. T. Applied Physics Letters, Vol. 99, Issue 6 https://doi.org/10.1063/1.3623479	journal	August 2011
Fast detection of single-charge tunneling to a graphene quantum dot in a multi-level regime Müller, T.; Güttinger, J.; Bischoff, D. Applied Physics Letters, Vol. 101, Issue 1 https://doi.org/10.1063/1.4733613	journal	July 2012
Electron spin lifetime of a single antimony donor in silicon Tracy, L. A.; Lu, T. M.; Bishop, N. C. Applied Physics Letters, Vol. 103, Issue 14 https://doi.org/10.1063/1.4824128	journal	September 2013
Quantum computer aided design simulation and optimization of semiconductor quantum dots Gao, X.; Nielsen, E.; Muller, R. P. Journal of Applied Physics, Vol. 114, Issue 16 https://doi.org/10.1063/1.4825209	journal	October 2013
A reconfigurable gate architecture for Si/SiGe quantum dots Zajac, D. M.; Hazard, T. M.; Mi, X. Applied Physics Letters, Vol. 106, Issue 22 https://doi.org/10.1063/1.4922249	journal	June 2015
Formation of strain-induced quantum dots in gated semiconductor nanostructures Thorbeck, Ted; Zimmerman, Neil M. AIP Advances, Vol. 5, Issue 8 https://doi.org/10.1063/1.4928320	journal	August 2015
Electrostatically defined silicon quantum dots with counted antimony donor implants Singh, M.; Pacheco, J. L.; Perry, D. Applied Physics Letters, Vol. 108, Issue 6 https://doi.org/10.1063/1.4940421	journal	February 2016
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime Baart, T. A.; Eendebak, P. T.; Reichl, C. Applied Physics Letters, Vol. 108, Issue 21 https://doi.org/10.1063/1.4952624	journal	May 2016
Fabrication of quantum dots in undoped Si/Si _0.8 Ge _0.2 heterostructures using a single metal-gate layer Lu, T. M.; Gamble, J. K.; Muller, R. P. Applied Physics Letters, Vol. 109, Issue 9 https://doi.org/10.1063/1.4961889	journal	August 2016
Enhancement-mode two-channel triple quantum dot from an undoped Si/Si _0.8 Ge _0.2 quantum well hetero-structure Studenikin, S. A.; Gaudreau, L.; Kataoka, K. Applied Physics Letters, Vol. 112, Issue 23 https://doi.org/10.1063/1.5023596	journal	June 2018
Automated tuning of inter-dot tunnel coupling in double quantum dots van Diepen, C. J.; Eendebak, P. T.; Buijtendorp, B. T. Applied Physics Letters, Vol. 113, Issue 3 https://doi.org/10.1063/1.5031034	journal	July 2018
Two-axis control of a singlet-triplet qubit with an integrated micromagnet Wu, X.; Ward, D. R.; Prance, J. R. Proceedings of the National Academy of Sciences, Vol. 111, Issue 33 https://doi.org/10.1073/pnas.1412230111	journal	August 2014
Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet Kawakami, Erika; Jullien, Thibaut; Scarlino, Pasquale Proceedings of the National Academy of Sciences, Vol. 113, Issue 42 https://doi.org/10.1073/pnas.1603251113	journal	October 2016
Spin filling of valley–orbit states in a silicon quantum dot Lim, W. H.; Yang, C. H.; Zwanenburg, F. A. Nanotechnology, Vol. 22, Issue 33 https://doi.org/10.1088/0957-4484/22/33/335704	journal	July 2011
Charge offset stability in Si single electron devices with Al gates Zimmerman, Neil M.; Yang, Chih-Hwan; Shyan Lai, Nai Nanotechnology, Vol. 25, Issue 40 https://doi.org/10.1088/0957-4484/25/40/405201	journal	September 2014
Undoped accumulation-mode Si/SiGe quantum dots Borselli, M. G.; Eng, K.; Ross, R. S. Nanotechnology, Vol. 26, Issue 37 https://doi.org/10.1088/0957-4484/26/37/375202	journal	August 2015
Quantum computation with quantum dots Loss, Daniel; DiVincenzo, David P. Physical Review A, Vol. 57, Issue 1 https://doi.org/10.1103/PhysRevA.57.120	journal	January 1998
Spectroscopy of Multielectrode Tunnel Barriers Shirkhorshidian, Amir; Gamble, John King; Maurer, Leon Physical Review Applied, Vol. 10, Issue 4 https://doi.org/10.1103/PhysRevApplied.10.044003	journal	October 2018
Addition spectrum of a lateral dot from Coulomb and spin-blockade spectroscopy Ciorga, M.; Sachrajda, A. S.; Hawrylak, P. Physical Review B, Vol. 61, Issue 24 https://doi.org/10.1103/PhysRevB.61.R16315	journal	June 2000
Observation of percolation-induced two-dimensional metal-insulator transition in a Si MOSFET Tracy, L. A.; Hwang, E. H.; Eng, K. Physical Review B, Vol. 79, Issue 23 https://doi.org/10.1103/PhysRevB.79.235307	journal	June 2009
Universal density scaling of disorder-limited low-temperature conductivity in high-mobility two-dimensional systems Das Sarma, S.; Hwang, E. H. Physical Review B, Vol. 88, Issue 3 https://doi.org/10.1103/PhysRevB.88.035439	journal	July 2013
Electron Cotunneling in a Semiconductor Quantum Dot De Franceschi, S.; Sasaki, S.; Elzerman, J. M. Physical Review Letters, Vol. 86, Issue 5 https://doi.org/10.1103/PhysRevLett.86.878	journal	January 2001
Energy-Dependent Tunneling in a Quantum Dot MacLean, K.; Amasha, S.; Radu, Iuliana P. Physical Review Letters, Vol. 98, Issue 3 https://doi.org/10.1103/PhysRevLett.98.036802	journal	January 2007
High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism Harvey-Collard, Patrick; D’Anjou, Benjamin; Rudolph, Martin Physical Review X, Vol. 8, Issue 2 https://doi.org/10.1103/PhysRevX.8.021046	journal	May 2018
Silicon quantum electronics Zwanenburg, Floris A.; Dzurak, Andrew S.; Morello, Andrea Reviews of Modern Physics, Vol. 85, Issue 3 https://doi.org/10.1103/RevModPhys.85.961	journal	July 2013
On surface roughness-limited mobility in highly doped n-MOSFET's Mazzoni, G.; Lacaita, A. L.; Perron, L. M. IEEE Transactions on Electron Devices, Vol. 46, Issue 7 https://doi.org/10.1109/16.772486	journal	July 1999
A fault-tolerant addressable spin qubit in a natural silicon quantum dot Takeda, Kenta; Kamioka, Jun; Otsuka, Tomohiro Science Advances, Vol. 2, Issue 8 https://doi.org/10.1126/sciadv.1600694	journal	August 2016
Electron Cotunneling in a Semiconductor Quantum Dot De Franceschi, S.; Elzerman, J. M.; Kouwenhoven, L. P. The American Physical Society https://doi.org/10.17877/de290r-12212	text	January 2001
Automated tuning of inter-dot tunnel coupling in double quantum dots Van Diepen, C. J.; Eendebak, Pieter T.; Buijtendorp, Bruno T. ETH Zurich https://doi.org/10.3929/ethz-b-000278721	text	January 2018
Measurement of valley splitting in high-symmetry Si/SiGe quantum dots Borselli, Matthew G.; Ross, Richard S.; Kiselev, Andrey A. arXiv https://doi.org/10.48550/arxiv.1012.1363	text	January 2010
An addressable quantum dot qubit with fault-tolerant control fidelity Veldhorst, M.; Hwang, J. C. C.; Yang, C. H. arXiv https://doi.org/10.48550/arxiv.1407.1950	text	January 2014
Undoped accumulation-mode Si/SiGe quantum dots Borselli, Matthew G.; Eng, Kevin; Ross, Richard S. arXiv https://doi.org/10.48550/arxiv.1408.0600	preprint	January 2014
Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures Thorbeck, Ted; Zimmerman, Neil M. arXiv https://doi.org/10.48550/arxiv.1409.3549	preprint	January 2014
A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots Zajac, D. M.; Hazard, T. M.; Mi, X. arXiv https://doi.org/10.48550/arxiv.1502.01624	text	January 2015
Coherent coupling between a quantum dot and a donor in silicon Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin arXiv https://doi.org/10.48550/arxiv.1512.01606	text	January 2015
A fault-tolerant addressable spin qubit in a natural silicon quantum dot Takeda, K.; Kamioka, J.; Otsuka, T. arXiv https://doi.org/10.48550/arxiv.1602.07833	text	January 2016
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime Baart, T. A.; Eendebak, P. T.; Reichl, C. arXiv https://doi.org/10.48550/arxiv.1603.02274	text	January 2016
Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer Lu, T. M.; Gamble, J. K.; Muller, R. P. arXiv https://doi.org/10.48550/arxiv.1608.08107	text	January 2016
Introduction to mesoscopic electron transport Kouwenhoven, Leo P.; Schön, Gerd; Sohn, Lydia L. Karlsruhe https://doi.org/10.5445/ir/60197	text	January 1997

Cited By (7)

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures Curry, M. J.; Rudolph, M.; England, T. D. Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-52868-1	journal	November 2019
Computer-automated tuning procedures for semiconductor quantum dot arrays Mills, A. R.; Feldman, M. M.; Monical, C. Applied Physics Letters, Vol. 115, Issue 11 https://doi.org/10.1063/1.5121444	journal	September 2019
Miniaturizing neural networks for charge state autotuning in quantum dots Czischek, Stefanie; Yon, Victor; Genest, Marc-Antoine Machine Learning: Science and Technology, Vol. 3, Issue 1 https://doi.org/10.1088/2632-2153/ac34db	journal	November 2021
Few-electrode design for silicon MOS quantum dots Ramirez, Eduardo B.; Sfigakis, Francois; Kudva, Sukanya Semiconductor Science and Technology, Vol. 35, Issue 1 https://doi.org/10.1088/1361-6641/ab516a	journal	November 2019
Quantum Transport Properties of Industrial Si 28 / Si O 2 28 Sabbagh, D.; Thomas, N.; Torres, J. Physical Review Applied, Vol. 12, Issue 1 https://doi.org/10.1103/physrevapplied.12.014013	journal	July 2019
Few-electrode design for silicon MOS quantum dots Ramirez, Eduardo B.; Sfigakis, Francois; Kudva, Sukanya arXiv https://doi.org/10.48550/arxiv.1812.09643	text	January 2018
Computer-automated tuning procedures for semiconductor quantum dot arrays Mills, A. R.; Feldman, M. M.; Monical, C. arXiv https://doi.org/10.48550/arxiv.1907.10775	text	January 2019

Similar Records

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

Program Document · Sat Jul 01 00:00:00 EDT 2017 · OSTI ID:1429808

Formation of strain-induced quantum dots in gated semiconductor nanostructures

Journal Article · Sat Aug 15 00:00:00 EDT 2015 · AIP Advances · OSTI ID:22492291

A reconfigurable gate architecture for Si/SiGe quantum dots

Journal Article · Mon Jun 01 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:22412541

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS

Quantum dots with split enhancement gate tunnel barrier control

Citation Formats

References (55)

Cited By (7)

Similar Records

Related Subjects