Quantum dots with split enhancement gate tunnel barrier control

Rochette, Sophie; Rudolph, M.; Roy, A. -M.; Curry, M. J.; Eyck, G. A.  Ten; Manginell, R. P.; Wendt, J. R.; Pluym, T.; Carr, S. M.; Ward, D. R.; Lilly, M. P.; Carroll, M. S.; Pioro-Ladrière, M.

doi:10.1063/1.5091111

Quantum dots with split enhancement gate tunnel barrier control

Journal Article · Mon Feb 25 23:00:00 EST 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5091111· OSTI ID:1498477

Rochette, Sophie ^[1]; Rudolph, M. ^[2]; Roy, A. -M. ^[1]; ^[3]; Eyck, G. A. Ten ^[2]; ^[2]; Wendt, J. R. ^[2]; Pluym, T. ^[2]; Carr, S. M. ^[2]; Ward, D. R. ^[2]; Lilly, M. P. ^[2]; Carroll, M. S. ^[2]; Pioro-Ladrière, M. ^[4]

Univ. de Sherbrooke (Canada)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of New Mexico, Albuquerque, NM (United States)
Univ. de Sherbrooke (Canada); Canadian Inst. for Advanced Research, Toronto, ON (Canada)

We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1498477

Report Number(s):: SAND--2019-0013J; 671222

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 114; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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