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Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4967177· OSTI ID:1473877
 [1];  [2];  [2];  [2]
  1. Univ. of California, Riverside, CA (United States). Dept. of Electrical and Computer Engineering; University of California Riverside
  2. Univ. of California, Riverside, CA (United States). Dept. of Electrical and Computer Engineering
Here, an electrically pumped ultraviolet random laser based on an Au-ZnO nanowire Schottky junction on top of a SiO2/SiNx distributed Bragg reflector (DBR) has been fabricated. Electrical characterization shows typical Schottky diode current-voltage characteristics. Evident random lasing behavior is observed from electroluminescence measurement at room temperature. In comparison with a reference device having similar nanowire morphology but no DBR, this laser demonstrates almost 1.8 times reduction in threshold current and 4 times enhancement in output power. The performance enhancement originates from the incorporation of the DBR structure, which provides high reflectivity in the designed wavelength range.
Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES); Univ. of California, Riverside, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0012670
OSTI ID:
1473877
Alternate ID(s):
OSTI ID: 1331024
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 109; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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