Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode
- Univ. of California, Riverside, CA (United States). Dept. of Electrical and Computer Engineering
Here, an electrically pumped ultraviolet random laser based on an Au-ZnO nanowire Schottky junction on top of a SiO2/SiNx distributed Bragg reflector (DBR) has been fabricated. Electrical characterization shows typical Schottky diode current-voltage characteristics. Evident random lasing behavior is observed from electroluminescence measurement at room temperature. In comparison with a reference device having similar nanowire morphology but no DBR, this laser demonstrates almost 1.8 times reduction in threshold current and 4 times enhancement in output power. The performance enhancement originates from the incorporation of the DBR structure, which provides high reflectivity in the designed wavelength range.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES); Univ. of California, Riverside, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0012670
- OSTI ID:
- 1473877
- Alternate ID(s):
- OSTI ID: 1331024
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 19; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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