Electrically Pumped Whispering Gallery Mode Lasing from Au/ZnO Microwire Schottky Junction

Bashar, Sunayna B.; Wu, Chunxia; Suja, Mohammad; Tian, Hao; Shi, Wenhao; Liu, Jianlin

doi:10.1002/adom.201600513

Electrically Pumped Whispering Gallery Mode Lasing from Au/ZnO Microwire Schottky Junction

Journal Article · Sun Sep 04 00:00:00 EDT 2016 · Advanced Optical Materials

DOI:https://doi.org/10.1002/adom.201600513· OSTI ID:1401011

Bashar, Sunayna B. ^[1]; Wu, Chunxia ^[2]; Suja, Mohammad ^[1]; Tian, Hao ^[1]; Shi, Wenhao ^[1]; Liu, Jianlin ^[1]

Department of Electrical and Computer Engineering University of California at Riverside Riverside CA 92521 USA
School of Materials Science and Engineering Jiangsu University Jiangsu 212013 China

Au/ZnO microwire Schottky diodes are fabricated. The devices exhibit typical Schottky diode I – V behavior with a turn‐on voltage of about 0.72 V. The hexagonal ZnO microwires act as whispering gallery mode (WGM) lasing microcavities. Under forward bias, a three‐microwire device exhibits WGM ultraviolet lasing spectra with a quality factor of about 1287. Output power of the laser has been measured at various injection currents, indicating threshold behavior with a threshold current of about 59 mA. Due to limited hole injection in the operation of Schottky diode, the lasing is a result of an excitonic recombination within the WGM cavity.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0012670

OSTI ID:: 1401011

Alternate ID(s):: OSTI ID: 1388961

Journal Information:: Advanced Optical Materials, Journal Name: Advanced Optical Materials Journal Issue: 12 Vol. 4; ISSN 2195-1071

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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