Ultraviolet electroluminescence from Au-ZnO nanowire Schottky type light-emitting diodes
- Univ. of California, Riverside, CA (United States); Nanjing Univ. of Technology (China). State Key Lab. of Advanced Photonic and Electronic Materials; Zhejiang Univ. of Technology, Hangzhou (China)
- Nanjing Univ. of Technology (China). State Key Lab. of Advanced Photonic and Electronic Materials
- Nanjing Univ. of Posts and Telecommunications (China). School of Geography and Biological Information
- College of Science, Zhejiang University of Technology, Hangzhou 310023, China
- Univ. of California, Riverside, CA (United States)
Here, ultraviolet electroluminescence from Schottky type LED device is demonstrated. The device prototype is based on Schottky junctions formed between Au and the top ends of ZnO nanowire arrays. Rectifying current-voltage characteristics are observed, and three different charge transport mechanisms are discussed in detail. Excitonic electroluminescence at around 380 nm is detected at high forward bias and the linear relationship between intensity and current suggests a LED device performance. The observation of LED signals from the simple Schottky structure provides a potential supplement to the category of ultraviolet LED devices.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- SC0012670
- OSTI ID:
- 1388962
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 108; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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