Pt/ZnO nanowire Schottky diodes
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO{sub 2}-coated Si substrates. The diodes exhibit excellent ideality factors of 1.1 at 25 deg. C and very low (1.5x10{sup -10} A, equivalent to 2.35 A cm{sup -2}, at -10 V) reverse currents. The nanowire diodes show a strong photoresponse, with the current-voltage characteristics becoming ohmic under ultraviolet illumination (366 nm light). The on-off current ratio of the diodes at 0.15/-5 V was {approx}6. These results show the ability to manipulate the electron transport in nanoscale ZnO devices.
- OSTI ID:
- 20634348
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 85; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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