Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layers

Journal Article · Sat May 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.587007· OSTI ID:147067

Wegscheider, W ^[1]; Cerva, H ^[2]

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1. Walter Schottky Institut, Garching (Germany)
2. Siemens AG, Research Lab., Muenchen (Germany)

The relaxation behavior of short-period Si/Ge superlattices and Si{sub x}Ge{sub 1-x} alloy layers under compressive and tensile strain field is compared experimentally by means of transmission electron microscopy as well as theoretically on ethebasis of a half-loop dislocation nucleation mode. It was found that misfit dislocations in tensily strained layers grown on Ge(001) substrates are imperfect and of the 90{degrees} Shockley type provided some critical misfit f{sub c} is exceeded. Subsequent nucleation and glide of these partial dislocations on adjacent (111) glide planes leads to the formation of stacking faults and microtwins. In the low misfit regime (f

• OSTI ID: 147067
• Report Number(s): CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0076
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON ALLOYS
RELAXATION
GERMANIDES
DISLOCATIONS
STACKING FAULTS
SUPERLATTICES
THICKNESS
CRYSTAL LATTICES