Dry etching of GaAs and AlGaAs by Cl{sub 2} in molecular beam epitaxy system

Journal Article · Sat May 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586907· OSTI ID:147062

Lee, H G; Fischer, R J; Zydzik, G J ^[1]

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1. AT&T Bell Lab., Murray Hill, NJ (United States); and others

We have investigated in situ dry etching of GaAs and AlGaAs utilizing Cl{sub 2} gas. At 350 {degrees}C substrate temperature, the etch rate was 0.2 and 0.5 {mu}m/min for both GaAs and Al{sub 0.3}Ga{sub 0.7}As at a Cl{sub 2} flow rate of 1 and 4 sccm, respectively. The Arrhenius plots of the etch rate indicates an activation energy of 10 kcal/mol for GaAs. Within the accuracy of our experiments, the AlGaAs etching behaves similarly to that of GaAs. We found that reproducible etching could only be obtained when great care was taken to assure a clean starting surface. Overgrowth of AlGaAs on etched AlGaAs results in a mirrorlike surface. 12 refs., 3 figs.

• OSTI ID: 147062
• Report Number(s): CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0070
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ETCHING
ALUMINIUM ARSENIDES
MOLECULAR BEAM EPITAXY
ACTIVATION ENERGY
ARRHENIUS EQUATION
TEMPERATURE DEPENDENCE