Bi-enhanced N incorporation in GaAsNBi alloys

Occena, J.; Jen, T.; Rizzi, E. E.; Johnson, T. M.; Horwath, J.; Wang, Y. Q.; Goldman, R. S.

doi:10.1063/1.4984227

Title: Bi-enhanced N incorporation in GaAsNBi alloys

Journal Article · Mon Jun 12 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4984227· OSTI ID:1427392

^[1];

^[1]; Rizzi, E. E. ^[1]; Johnson, T. M. ^[1]; Horwath, J. ^[2]; Wang, Y. Q. ^[3];

^[1]

Univ. of Michigan, Ann Arbor, MI (United States)
Alfred Univ., NY (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

We have examined the influence of bismuth (Bi) and nitrogen (N) fluxes on N and Bi incorporation during molecular-beam epitaxy of GaAs_1-x-yN_xBi_y alloys. The incorporation of Bi is found to be independent of N flux, while the total N incorporation and the fraction of N atoms occupying non-substitutional lattice sites increase with increasing Bi flux. A comparison of channeling nuclear reaction analysis along the [100], [110], and [111] directions with Monte Carlo-Molecular Dynamics simulations indicates that the non-substitutional N primarily incorporate as (N-As)_As interstitial complexes. We discuss the influence of Bi adatoms on the formation of arsenic-terminated [110]-oriented step-edges and the resulting enhancement in total N incorporation via the formation of additional (N-As)_As.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1427392

Report Number(s):: LA-UR-18-21407; TRN: US1802856

Journal Information:: Applied Physics Letters, Vol. 110, Issue 24; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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Surfactant-induced chemical ordering of GaAsN:Bi Occena, J.; Jen, T.; Lu, H. Applied Physics Letters, Vol. 113, Issue 21 https://doi.org/10.1063/1.5045606	journal	November 2018
Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys Occena, J.; Jen, T.; Mitchell, J. W. Applied Physics Letters, Vol. 115, Issue 8 https://doi.org/10.1063/1.5057424	journal	August 2019
Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys Greenman, Kevin; Williams, Logan; Kioupakis, Emmanouil Journal of Applied Physics, Vol. 126, Issue 5 https://doi.org/10.1063/1.5108731	journal	August 2019
Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers Luna, E.; Wu, M.; Aoki, T. Journal of Applied Physics, Vol. 126, Issue 8 https://doi.org/10.1063/1.5111532	journal	August 2019
First principles study of the structural, electronic and optical properties of epitaxial GaSb _1−x−y N _y Bi _x , lattice matched to GaSb Utsa, Das; Thangavel, R.; Dhar, S. Materials Research Express, Vol. 5, Issue 11 https://doi.org/10.1088/2053-1591/aadbf1	journal	September 2018
Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi Liang, Dan; Zhu, Pengfei; Han, Lihong Nanoscale Research Letters, Vol. 14, Issue 1 https://doi.org/10.1186/s11671-019-2968-0	journal	May 2019

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