Bismuth interstitial impurities and the optical properties of GaP1-x -yBixNy
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
Two distinctive regimes of behavior are observed from GaP1-x-y Bi x N y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. Finally, this change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1409005
- Report Number(s):
- NREL/JA--5K00-70115
- Journal Information:
- Japanese Journal of Applied Physics, Journal Name: Japanese Journal of Applied Physics Journal Issue: 11 Vol. 56; ISSN 0021-4922
- Publisher:
- Japan Society of Applied PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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