Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs{sub 1-x}Bi{sub x}

Journal Article · Mon May 12 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2918844· OSTI ID:21102050

Lu, X; Beaton, D A; Lewis, R B; Whitwick, M B ^[1]; Tiedje, T ^[1]

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1. Advanced Materials and Process Engineering Laboratory, Department of Physics and Astronomy, University of British Columbia, Vancouver V6T 1Z4 (Canada)

We describe how the Bi content of GaAs{sub 1-x}Bi{sub x} epilayers grown on GaAs can be controlled by the growth conditions in molecular beam epitaxy. Nonstandard growth conditions are required because of the strong tendency for Bi to surface segregate under usual growth conditions for GaAs. A maximum Bi content of 10% is achieved at low substrate temperature and low arsenic pressure, as inferred from x-ray diffraction measurements. A model for bismuth incorporation is proposed that fits a large body of experimental data on Bi content for a wide range of growth conditions. Low growth rates are found to facilitate the growth of bismide alloys with a low density of Bi droplets.

• OSTI ID: 21102050
• Journal Information: Applied Physics Letters, Vol. 92, Issue 19; Other Information: DOI: 10.1063/1.2918844; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC
BISMUTH
BISMUTH ALLOYS
CRYSTAL GROWTH
DROPLETS
GALLIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
SEGREGATION
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
X-RAY DIFFRACTION