Metalorganic chemical vapor deposition
- Navel Research Laboratory, Washington, DC (United States)
Thin films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} up to 4000 {angstrom} thick, were grown in-situ on 15 x 15 mm (100) LaAlO{sub 3}, (100)SrTiO{sub 3}, and (100) MgO substrates by metalorganic chemical vapor deposition (MOCVD). The as-deposited films were c-axis oriented, and had transition temperatures between 86-89 K, transition widths less than or equal to 1 K, and critical current densities of 1-3 x 10{sup 6} A/cm{sup 2} at 77 K and 0 T. Microwave surface resistance measurements (36.4 GHz) at temperatures between 20 K and 100 K, made using a copper-cavity end-wall-replacement technique, showed a sharp drop through the transition temperature and yielded values at 77 K that were better than 20X improvement over copper metal when scaled to 10 GHz. Double-sided coatings have been obtained by sequentially depositing each side of the substrate. Contamination of the backside during growth of the first-side film of the first-side film during growth of the second-side film has been avoided by coating the susceptor with gold.
- OSTI ID:
- 141104
- Report Number(s):
- CONF-930304--
- Country of Publication:
- United States
- Language:
- English
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