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High-quality YBa sub 2 Cu sub 3 O sub 7 minus x thin films by plasma-enhanced metalorganic chemical vapor deposition at low temperature

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.105468· OSTI ID:5411641
; ; ; ; ; ; ; ; ; ;  [1]
  1. EMCORE Corporation, 35 Elizabeth Avenue, Somerset, New Jersey (USA)

Single-crystalline epitaxial YBa{sub 2}Cu{sub 3}O{sub 7-{ital x}} thin films with a sharp superconducting transition temperature of 90 K and a critical current density of 3.3{times}10{sup 6} A/cm{sup 2} at 77 K were prepared by a plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. The films were formed {ital in} {ital situ} on (100) LaAlO{sub 3} substrates at a temperature of 670 {degree}C in 2 Torr partial pressure of N{sub 2}O. X-ray analysis indicated that films grew epitaxially with the {ital c}-axis perpendicular to the substrate and the {ital a} and {ital b} axes uniformly aligned along the LaAlO{sub 3} (100) directions. High-resolution transmission electron microscopy along with electron diffraction revealed that the films grew epitaxially with atomically abrupt film-substrate interfaces. The high degree of epitaxial crystallinity of the films was also confirmed by Rutherford backscattering spectroscopy which gave a minimum channeling yield of 9%.

OSTI ID:
5411641
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:10; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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