Single source precursors for the MOCVD fabrication of semiconductor films
- Eastman Kodak Company, Rochester, NY (United States)
The use of single source precursor reagents in the fabrication of thin films of electronic materials offers a considerable processing advantage compared to the conventional multiple source chemistry. The use of such reagents to prepare thin films of typical semiconductors by MOCVD and a solution-based spray MOCVD (metalorganic chemical vapor deposition) process will be described. Using such processes a variety of high quality semiconductor films have been fabricated: 2-6 materials (i.e., ZnS), 3-5 materials (i.e., GaAs) and 3-6 materials (i.e., InSe, In{sub 2}Se{sub 3}, In{sub 2}S{sub 3}, Ga{sub 2}Se{sub 3}, Ga{sub 2}S{sub 3}, Ga{sub 2}Te{sub 3}). The synthesis of the single source precursors as well as the film processing conditions and the characterization of the films will be discussed.
- OSTI ID:
- 141087
- Report Number(s):
- CONF-930304--
- Country of Publication:
- United States
- Language:
- English
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