Synthesis of alkyl indium selenolate precursors and characterization of InSe films from MOCVD
- Harvard Univ., Cambridge, MA (United States)
Of the 13-16 semi-conductors, InSe is of particular interest for potential passivation of InP in an analogous manner found for the passivation of GaAs by GaS. In addition to developing a low temperature route using a single source precursor. it is of interest to identify the factors that govern the phase and morphology of films crown by chemical vapor deposition. A series of [(R){sub 2}InSe(R)]{sub 2} dimers and [(R)InSe]{sub 4} cubanes (R={sup t}Bu, {sup t}Amyl) have been synthesized and characterized for use as precursors. Thin films of InSe were grown by atmospheric CVD on a variety of substrates. Composition was determined by EDX and RBS, and phase identification was based on electron and X-ray diffraction. Discussion will include the importance of the core molecular species to the resultant phase as well as the thermal effects on film growth.
- OSTI ID:
- 214916
- Report Number(s):
- CONF-950801--
- Country of Publication:
- United States
- Language:
- English
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