MOCVD deposition of epitaxial LiNbO[sub 3] thin films using the single-source precursor LiNb(OEt)[sub 6]
- Eastman Kodak Company, Rochester, NY (United States)
In this communication the authors report the fabrication of epitaxial LiNbO[sub 3] thin films of improved crystalline properties and surface morphology using the well-characterized single-source reagent, LiNb(OEt)[sub 6]. The spray MOCVD film fabrication technique used for these depositions is essentially a chemical vapor deposition process in which precursors with relatively low vapor pressure are transported via a mist into a hot-wall reactor where rapid and efficient volatilization occurs. Previous work in this laboratory has demonstrated its utility for the fabrication of high-quality thin films of various semiconductors (i.e., ZnS, GaAs, InSe, and In[sub 2]Se[sub 3][sup 14]) using single-source precursor reagents. A related MOCVD process (supercritical fluid-transport chemical vapor deposition), which can also use precursors of low volatility, has been recently reported.
- OSTI ID:
- 7284178
- Journal Information:
- Chemistry of Materials; (United States), Journal Name: Chemistry of Materials; (United States) Vol. 5:8; ISSN CMATEX; ISSN 0897-4756
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
ALKALI METAL COMPOUNDS
ALKOXIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
LITHIUM COMPOUNDS
NIOBATES
NIOBIUM COMPOUNDS
OXYGEN COMPOUNDS
REFRACTORY METAL COMPOUNDS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS