Characterization of CuGaSe{sub 2} thin films grown by MOCVD
CuGaSe{sub 2} thin films have been grown by metalorganic chemical vapor deposition (MOCVD), from three organometallic precursors. Samples of about 1-2 {mu}m thick are codeposited onto Pyrex and Mo-coated soda lime glass. A large range of compositions was investigated and characterized. Stoichiometric CuGaSe{sub 2} thin films are single-phased and their optical bandgap is about 1.68 eV. The features of the films are presented in relation with their composition. XRD spectra always exhibit a preferential orientation along the (112) plane. Secondary phases haven been observed: Cu{sub 2}Se for Cu-rich films, CuGa{sub 3}Se{sub 5} for Ga-rich films. Observation of the morphology reveals larger polyhedral grains for Cu-rich films becoming platelet-shaped and titled for Ga-rich compounds. The optical properties are also sensitive to the compositional changes and related to the eventual presence of binary phases. The gap increases with the Ga content. The CuGa{sub 3}Se{sub 5} phase exhibit a gap of about 1.85 eV. All the samples have a p-type conductivity.
- Research Organization:
- Univ. Montpellier II (FR)
- OSTI ID:
- 20006085
- Journal Information:
- IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers) Journal Issue: 10 Vol. 46; ISSN IETDAI; ISSN 0018-9383
- Country of Publication:
- United States
- Language:
- English
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