Chemical vapor deposition of Group IV carbides from single source precursors: The use of homoleptic alkyls
- Los Alamos National Laboratory, NM (United States)
- MIT, Cambridge, MA (United States)
The use of M[CH{sub 2}C(CH{sub 3}){sub 3}]{sub 4} [M = Ti, Zr, Hf] and related compounds to form thin films of Group IV metalcarbides has been investigated. Zirconium carbide can be deposited on Si substrates from Zr[CH{sub 2}C(CH{sub 3}){sub 3}]{sub 4} at temperatures in the range of 300 to750{degrees}C and pressures from 10{sup {minus}2} to 10{sup {minus}4} torr. The effects of deposition conditions on the resulting material has been examined by SEM, XPS, and AES. In situ mass spectrometry and analysis of the hydrocarbon fragments generated in the reactor have also been studied. The mechanism of decomposition of Zr[CH{sub 2}C(CH{sub 3}){sub 3}]{sub 4} under conditions approximating the CVD experiment is related to solution phase decomposition studies and to properties of the resulting thin films. Variation of the coordination sphere of the group IV metal has allowed for a preliminary determination of desirable ligands for this system. Studies with Zr[CH{sub 2}C(CH{sub 3}){sub 3}]{sub 4} showed that crystalline films can be deposited at high temperature (>550{degrees}C) regardless of pressure. Auger electron spectroscopy depth profiling trends indicated all films to be uniform in composition (with a constant metal to carbon ratio) and to contain some residual oxygen in the bulk. X-ray photoelectron spectroscopy shows carbon to be present in carbidic and graphitic forms, while zirconium is single phase with a small amount of zirconium dioxide present in the bulk.
- OSTI ID:
- 141048
- Report Number(s):
- CONF-930304--
- Country of Publication:
- United States
- Language:
- English
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