Chemical vapor deposition of cerium oxide using the precursors [Ce(hfac){sub 3}(glyme)]
Precursors of formula [Ce(hfac){sub 3}{l_brace}MeO(CH{sub 2}CH{sub 2}O){sub n}Me{r_brace}], 1 (n = 1), 2 (n = 2), and 3 (n = 3), and [{l_brace}Ce(hfac){sub 3}{r_brace}{sub 2}{l_brace}{mu}-MeO(CH{sub 2}CH{sub 2}O){sub 4}Me{r_brace}], 4 (hfac = CF{sub 3}COCHCOCF{sub 3}), have been prepared and used as precursors for chemical vapor deposition (CVD) of films of cerium oxides on the substrates Si, Pt, and TiN. Thermal CVD at 450 C with oxygen as carrier gas gave mixed Ce(III)/Ce(IV) oxides, and the main crystalline component was Ce{sub 4}O{sub 7}, but with fluoride impurity. The fluoride impurity was not observed if CVD was carried out using moist oxygen as carrier gas or if the as-deposited films were annealed in oxygen. Codeposition with [Y(hfac){sub 3}{l_brace}MeO(CH{sub 2}CH{sub 2}O){sub 2}Me{r_brace}] gave films of the mixed Ce(IV)Y(III) oxide Ce{sub 2}Y{sub 2}O{sub 7}. The depositions of cerium oxides could be enhanced by use of a palladium precursor catalyst [Pd(2-methylallyl)(acetylacetonate)] and could then be carried out at 250 C, giving films of CeO{sub 2}. Under carefully controlled conditions, films of ceria-supported palladium could be prepared by this method. The films were characterized by using X-ray photoelectron spectroscopy, scanning electron microscopy, and X-ray diffraction techniques.
- Research Organization:
- Univ. of Western Ontario, London, Ontario (CA)
- OSTI ID:
- 20050864
- Journal Information:
- Chemistry of Materials, Journal Name: Chemistry of Materials Journal Issue: 3 Vol. 12; ISSN CMATEX; ISSN 0897-4756
- Country of Publication:
- United States
- Language:
- English
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