Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

Huang, S.; Kim, S. J.; Pan, X. Q.; Goldman, R. S.

doi:10.1063/1.4891330

Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891330· OSTI ID:1383972

Huang, S. ^[1]; Kim, S. J. ^[1]; Pan, X. Q. ^[1]; Goldman, R. S. ^[2]

Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering, and Dept. of Physics

We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

View Accepted Manuscript (DOE)

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0000957

OSTI ID:: 1383972

Alternate ID(s):: OSTI ID: 22311143
OSTI ID: 1167788

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 105; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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