In-plane self-arrangement of high-density InAs quantum dots on GaAsSb/GaAs(001) by molecular beam epitaxy
- Department of Electronic Engineering, The University of Electro-Communications, 1-5-1 Chougaoka, Chofu, Tokyo 182-8585 (Japan)
InAs quantum dots (QDs) were grown on GaAsSb/GaAs(001) buffer layers by molecular beam epitaxy using a Stranski-Krastanov mode. A high QD density of about 1x10{sup 11} cm{sup -2} was obtained for an Sb flux ratio of more than 0.14. In the case of high-density QD growth on the GaAsSb layers, many nanoholes were observed on the surface and located beside the QDs. In addition, one-dimensional QD chains were formed near nanogrooves and step edges. As the InAs growth proceeded, an in-plane arrangement of the InAs QDs was partially formed along <010> directions. It is considered that the in-plane arrangement of the QDs originates from the QD chains and the nanogrooves, aligned along <010> step edges. From transmission electron microscopy and photoluminescence measurements, it was found that the high-density InAs QDs on the GaAsSb buffer layer reveal high crystal quality.
- OSTI ID:
- 20982852
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 101; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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