Interfacial stability and misfit dislocation formation in InAs/GaAs(110) heteroepitaxy
- Univ. of California, Santa Barbara, CA (United States). Dept. of Chemical Engineering
A comprehensive atomic-scale study is presented of the mechanical behavior of the InAs epitaxial film, the interfacial stability with respect to misfit dislocation formation, and the film surface morphology in InAs/GaAs(110) heteroepitaxy. If a GaAs buffer layer of ten-monolayer thickness is used in the epitaxial growth, a transition is predicted from a coherent to a semicoherent interface consisting of a regular array of edge interfacial misfit dislocations at a critical film thickness of six monolayers. A second transition to a semicoherent interface consisting of a completely developed network of perpendicularly intersecting misfit dislocations is predicted at thicknesses greater than 150 monolayers. The simulation results are in excellent agreement with recent experimental data.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States); Tacoma-Pierce County Health Dept., WA (United States)
- OSTI ID:
- 305515
- Report Number(s):
- CONF-971201--
- Country of Publication:
- United States
- Language:
- English
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