On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

Meyaard, David S.; Shan, Qifeng; Dai, Qi; Cho, Jaehee; Schubert, E. Fred; Kim, Min-Ho; Sone, Cheolsoo

doi:10.1063/1.3618673

On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

Journal Article · Mon Jul 25 04:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3618673· OSTI ID:1383685

Meyaard, David S.; Shan, Qifeng; Dai, Qi; Cho, Jaehee; Schubert, E. Fred; Kim, Min-Ho; Sone, Cheolsoo

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE SC Office of Basic Energy Sciences (SC-22)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1383685

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 99; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

References (11)

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes Dai, Qi; Shan, Qifeng; Wang, Jing Applied Physics Letters, Vol. 97, Issue 13 https://doi.org/10.1063/1.3493654	journal	September 2010
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers Xie, Jinqiao; Ni, Xianfeng; Fan, Qian Applied Physics Letters, Vol. 93, Issue 12 https://doi.org/10.1063/1.2988324	journal	September 2008
Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes Zhang, M.; Bhattacharya, P.; Singh, J. Applied Physics Letters, Vol. 95, Issue 20 https://doi.org/10.1063/1.3266520	journal	November 2009
Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes David, Aurélien; Grundmann, Michael J.; Kaeding, John F. Applied Physics Letters, Vol. 92, Issue 5 https://doi.org/10.1063/1.2839305	journal	February 2008
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures Vampola, Kenneth J.; Iza, Michael; Keller, Stacia Applied Physics Letters, Vol. 94, Issue 6 https://doi.org/10.1063/1.3081059	journal	February 2009
Light-Emitting Diodes Schubert, E. Fred https://doi.org/10.1017/CBO9780511790546	book	January 2006
Origin of efficiency droop in GaN-based light-emitting diodes Kim, Min-Ho; Schubert, Martin F.; Dai, Qi Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2800290	journal	October 2007
High-Power and High-Efficiency InGaN-Based Light Emitters Laubsch, Ansgar; Sabathil, Matthias; Baur, Johannes IEEE Transactions on Electron Devices, Vol. 57, Issue 1 https://doi.org/10.1109/TED.2009.2035538	journal	January 2010
On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms Dai, Qi; Shan, Qifeng; Cho, Jaehee Applied Physics Letters, Vol. 98, Issue 3 https://doi.org/10.1063/1.3544584	journal	January 2011
Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis David, Aurélien; Grundmann, Michael J. Applied Physics Letters, Vol. 96, Issue 10 https://doi.org/10.1063/1.3330870	journal	March 2010
Auger recombination in InGaN measured by photoluminescence Shen, Y. C.; Mueller, G. O.; Watanabe, S. Applied Physics Letters, Vol. 91, Issue 14 https://doi.org/10.1063/1.2785135	journal	October 2007

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On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

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