Temperature-Dependent Light-Output Characteristics of GaInN Light-Emitting Diodes with Different Dislocation Densities.
Journal Article
·
· Applied Physics Letters
OSTI ID:1122536
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1122536
- Report Number(s):
- SAND2010-5385J; 491679
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities
On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes
Efficiency droop in AlGaInP and GaInN light-emitting diodes
Journal Article
·
Sun Jan 09 23:00:00 EST 2011
· Physica Status Solidi. A, Applications and Materials Science
·
OSTI ID:1380522
On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes
Journal Article
·
Mon Jul 25 00:00:00 EDT 2011
· Applied Physics Letters
·
OSTI ID:1383685
Efficiency droop in AlGaInP and GaInN light-emitting diodes
Journal Article
·
Mon Mar 12 00:00:00 EDT 2012
· Applied Physics Letters
·
OSTI ID:1380998