Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities

Journal Article · Mon Jan 10 04:00:00 EST 2011 · Physica Status Solidi. A, Applications and Materials Science

DOI:https://doi.org/10.1002/pssa.201026668· OSTI ID:1380522

Chhajed, Sameer; Cho, Jaehee; Schubert, E. Fred; Kim, Jong Kyu; Koleske, Daniel D.; Crawford, Mary H.

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Journal Information:: Physica Status Solidi. A, Applications and Materials Science, Journal Name: Physica Status Solidi. A, Applications and Materials Science Journal Issue: 4 Vol. 208; ISSN 1862-6300

References (6)

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers Lee, S. R.; West, A. M.; Allerman, A. A. Applied Physics Letters, Vol. 86, Issue 24 https://doi.org/10.1063/1.1947367	journal	June 2005
Light-Emitting Diodes Schubert, E. Fred https://doi.org/10.1017/CBO9780511790546	book	January 2006
Origin of efficiency droop in GaN-based light-emitting diodes Kim, Min-Ho; Schubert, Martin F.; Dai, Qi Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2800290	journal	October 2007
Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes Schubert, Martin F.; Chhajed, Sameer; Kim, Jong Kyu Applied Physics Letters, Vol. 91, Issue 23 https://doi.org/10.1063/1.2822442	journal	December 2007
Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes Cao, X. A.; Stokes, E. B.; Sandvik, P. M. IEEE Electron Device Letters, Vol. 23, Issue 9 https://doi.org/10.1109/LED.2002.802601	journal	September 2002
Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities Dai, Q.; Schubert, M. F.; Kim, M. H. Applied Physics Letters, Vol. 94, Issue 11 https://doi.org/10.1063/1.3100773	journal	March 2009

Temperature-Dependent Light-Output Characteristics of GaInN Light-Emitting Diodes with Different Dislocation Densities.

Journal Article · Sun Aug 01 00:00:00 EDT 2010 · Applied Physics Letters · OSTI ID:1122536

Journal Article · Mon Jul 25 00:00:00 EDT 2011 · Applied Physics Letters · OSTI ID:1383685

Efficiency droop in AlGaInP and GaInN light-emitting diodes

Journal Article · Mon Mar 12 00:00:00 EDT 2012 · Applied Physics Letters · OSTI ID:1380998

solar (photovoltaic)
solid state lighting
phonons
materials and chemistry by design
optics
synthesis (novel materials)